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| 008 | 230710s2023 gw o 000 0 eng d | ||
| 020 | _a9783527351459 | ||
| 020 |
_a9783527840465 _qelectronic book |
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| 020 |
_a9783527840489 _qelectronic book |
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| 020 |
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| 020 |
_z3527351450 _qhardcover |
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| 035 | _a(OCoLC)1389714846 | ||
| 035 | 9 | _a(OCLCCM-Owned)1389714846 | |
| 040 |
_aYDX _beng _erda _cYDX _dYDX _dDG1 _dN$T _dSFB _dOCLCO _dOCLCF _dWSU _dUKAHL _dCLOUD _dOCLCO _dUKKRT _dOCLCQ _dHOPLA _dOCLCL |
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| 041 | _aeng | ||
| 049 | _aMAIN | ||
| 050 | 4 |
_aQC173.4.I57 _bG86 2023 |
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| 100 | 1 |
_aGuo, Xuefeng, _eauthor. |
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| 245 | 1 | 0 |
_aInterface engineering in organic field-effect transistors / _cXuefeng Guo, Hongliang Chen. |
| 264 | 1 |
_aWeinheim, Germany : _bWiley-VCH, _c[2023] |
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| 300 | _a1 online resource | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 505 | 0 | _aCover -- Title Page -- Copyright -- Contents -- Preface -- Author Biographies -- List of Acronyms and Abbreviations -- Chapter 1 Introduction -- 1.1 Different Interfaces in OFETs -- 1.2 Brief Historic Overview of Interface Engineering in OFETs -- 1.3 Scope of the Book -- Chapter 2 Interfacial Modification Methods -- 2.1 Noncovalent Modification Methods -- 2.1.1 Charge Insertion Layer at the Electrode Surface -- 2.1.2 Dielectric Surface Passivation Methods -- 2.2 Covalent Modification Methods -- 2.2.1 SAM Modification of Electrodes -- 2.2.2 SAM Modification of Dielectrics -- 2.2.2.1 SAM/SiO2 Dielectrics -- 2.2.2.2 SAM/High-k Dielectrics -- 2.2.2.3 Self-Assembled Monolayer Field-Effect Transistors (SAMFETs) -- 2.3 Efforts in Developing New Methods -- Chapter 3 Semiconductor/Semiconductor Interface -- 3.1 Influence of Additives on a Material's Nucleation and Morphology -- 3.1.1 Solvent Additives -- 3.1.2 Nucleating Agents -- 3.1.3 Template-Mediated Crystallization -- 3.1.4 Blending with Insulating Polymers -- 3.1.5 Blending with Polymer Elastomer: Nanoconfinement Effect -- 3.2 Enhancing the Performance Through Semiconductor Heterojunctions -- 3.2.1 Planar Bilayer Heterostructures -- 3.2.2 Molecular-Level Heterojunction -- 3.2.3 Supramolecular Arrangement of the Heterojunctions -- 3.3 Integrating Molecular Functionalities into Electrical Circuits -- 3.3.1 Charge-Trapping-Induced Memory Effect -- 3.3.2 Photochromism-Induced Switching Effect -- Chapter 4 Semiconductor/Electrode Interface -- 4.1 Work Function Tuning for Better Contact -- 4.1.1 SAM Modification -- 4.1.2 Charge Insertion Layer Modification -- 4.1.3 Polymer-Based Electrodes -- 4.1.4 Carbon Nanomaterial-Based Electrodes -- 4.1.5 Covalent Bond Formation at the Molecular Level -- 4.2 Installing Switching Effects at Semiconductor/Electrode Interface. | |
| 505 | 8 | _aChapter 5 Semiconductor/Dielectric Interface -- 5.1 Dielectric Modification to Tune Semiconductor Morphology -- 5.1.1 Dielectric Surface Energy Control -- 5.1.1.1 Modify with SAM -- 5.1.1.2 Surface Modification with Polymers -- 5.1.2 Dielectric Microstructure Design -- 5.1.2.1 Roughness Effect -- 5.1.2.2 Nano-fabrication Created Microstructure -- 5.1.2.3 Self-assembled Morphology of Dielectric -- 5.2 Eliminating Interfacial Traps -- 5.2.1 Dielectric Surface Passivation (Treatment) Methods -- 5.2.1.1 Polymer Encapsulation of Dielectrics -- 5.2.1.2 Gap Dielectrics -- 5.2.2 SAM/SiO2 Dielectrics -- 5.2.2.1 Provide Efficient Insulating Barrier Height -- 5.2.2.2 Control Surface Polarity and Carrier Density -- 5.2.3 SAM/High-k Dielectrics -- 5.2.3.1 Fundamentals of SAM-Modified High-k Dielectrics -- 5.2.3.2 SAM/High-k Hybrid Dielectrics for Flexible Substrate -- 5.2.4 Self-assembled Monolayer Field-Effect Transistors (SAMFETs) -- 5.2.4.1 Molecule Design for SAMFETs -- 5.2.4.2 Morphology Control of SAMFET -- 5.3 Integrating New Functionalities -- 5.3.1 Photoresponsive Dielectrics -- 5.3.2 Other External Stimuli-Responsive Dielectrics -- 5.3.2.1 Pressure Sensor -- 5.3.2.2 Thermal Sensor -- 5.3.2.3 Magnetic Sensor -- 5.3.2.4 Multifunctional Sensor -- 5.3.3 Integrating Memory Effect at the Dielectrics -- Chapter 6 Semiconductor/Environment Interface -- 6.1 Device Optimization to Improve Sensing Performance -- 6.1.1 Monolayer Functionalization -- 6.1.2 Bilayer Heterojunction Approach -- 6.1.3 Remote Floating Gate -- 6.2 OECT-Based and EGOFET-Based Sensors -- Chapter 7 Interfacing Organic Electronics with Biology -- 7.1 Integration of OFETs/OECTs with Nonelectrogenic Cells -- 7.2 Integration of Flexible Bioelectronics with Electrogenic Cells -- 7.3 Light/Cell/Device Interfaces -- Chapter 8 Concluding Remarks and Outlook -- 8.1 New Challenges in Molecular Design. | |
| 505 | 8 | _a8.2 High-Quality OSC Films: Self-Assembly Control -- 8.3 High-Performance Scalable Flexible Optoelectronics -- 8.4 Exploration of Novel Structures: Organic/2D Heterostructures and Vertical Structures -- 8.5 Instability: Stability in Aqueous Media and Thermal Stability in Hygienic Applications -- 8.6 Multifunctional Sensor Systems -- References -- Index -- EULA. | |
| 520 | _aInterface Engineering in Organic Field-Effect Transistors covers the state of the art in organic field-effect transistors and reviews charge transport at the interfaces, device design concepts, and device fabrication processes, and gives an outlook on the development of future optoelectronic devices. This book starts with an overview of the commonly adopted methods to obtain various semiconductor/semiconductor interfaces and charge transport mechanisms at these heterogeneous interfaces. Then, it covers the modification at the semiconductor/electrode interfaces, through which to tune the work function of electrodes as well as reveal charge injection mechanisms at the interfaces. Charge transport physics at the semiconductor/dielectric interface is discussed in detail. The book describes the remarkable effect of SAM modification on the semiconductor film morphology and thus the electrical performance. In particular, valuable analyses of charge trapping/detrapping engineering at the interface to realize new functions are summarized. | ||
| 588 | _aDescription based on online resource; title from digital title page (viewed on July 12, 2023). | ||
| 650 | 0 |
_aInterfaces (Physical sciences) _0http://id.loc.gov/authorities/subjects/sh94006577 |
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| 650 | 0 |
_aOrganic field-effect transistors. _0http://id.loc.gov/authorities/subjects/sh2006008274 |
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| 650 | 6 | _aInterfaces (Sciences physiques) | |
| 650 | 6 | _aTransistors à effet de champ organiques. | |
| 650 | 7 |
_aMaterials Science. _2bisacsh/2022 |
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| 650 | 7 |
_aPhysical & Theoretical. _2bisacsh/2022 |
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| 650 | 7 |
_aChemistry. _2bisacsh/2022 |
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| 650 | 7 |
_aSCIENCE. _2bisacsh/2022 |
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| 650 | 7 |
_aSemiconductors. _2bisacsh/2022 |
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| 650 | 7 |
_aElectronics. _2bisacsh/2022 |
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| 650 | 7 |
_aTECHNOLOGY & ENGINEERING. _2bisacsh/2022 |
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| 650 | 7 |
_aMaterials Science. _2bisacsh/2023 |
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| 650 | 7 |
_aPhysical & Theoretical. _2bisacsh/2023 |
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| 650 | 7 |
_aChemistry. _2bisacsh/2023 |
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| 650 | 7 |
_aSCIENCE. _2bisacsh/2023 |
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| 650 | 7 |
_aSemiconductors. _2bisacsh/2023 |
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| 650 | 7 |
_aElectronics. _2bisacsh/2023 |
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| 650 | 7 |
_aTECHNOLOGY & ENGINEERING. _2bisacsh/2023 |
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| 650 | 7 |
_aMaterials Science. _2bisacsh/2024 |
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| 650 | 7 |
_aPhysical & Theoretical. _2bisacsh/2024 |
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| 650 | 7 |
_aChemistry. _2bisacsh/2024 |
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| 650 | 7 |
_aSCIENCE. _2bisacsh/2024 |
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| 650 | 7 |
_aSemiconductors. _2bisacsh/2024 |
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| 650 | 7 |
_aElectronics. _2bisacsh/2024 |
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| 650 | 7 |
_aTECHNOLOGY & ENGINEERING. _2bisacsh/2024 |
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| 650 | 7 |
_aInterfaces (Physical sciences) _2fast |
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| 650 | 7 |
_aOrganic field-effect transistors _2fast |
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| 650 | 7 |
_aBiosensors. _2thub |
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| 653 | _aChemistry, Physical And Theoretical | ||
| 653 | _aSemiconductors | ||
| 653 | _aScience | ||
| 653 | _aTechnology & Engineering | ||
| 655 | 0 | _aElectronic books. | |
| 655 | 7 |
_aLlibres electrònics. _2thub |
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| 700 | 1 |
_aChen, Hongliang, _eauthor. |
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| 776 | 0 | 8 |
_iPrint version: _z3527351450 _z9783527351459 _w(OCoLC)1310398452 |
| 856 | 4 | 0 |
_uhttps://onlinelibrary.wiley.com/doi/book/10.1002/9783527840489 _yFull text is available at Wiley Online Library. Click here to view. |
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