Graphene for post-Moore silicon optoelectronics / Yang Xu [and more]

By: Xu, Yang [author.]
Language: English Publisher: Germany : Wiley-VCH, 2023Description: 1 online resourceContent type: text Media type: computer Carrier type: online resourceISBN: 9783527351817; 9783527841011; 9783527840991; 3527840990; 3527841016; 9783527841004; 3527841008Subject(s): Optoelectronics -- Materials | GrapheneGenre/Form: Electronic books.DDC classification: 621.381045 LOC classification: TA1750Online resources: Full text is available at Wiley Online Library Click here to view
Contents:
Table of Contents CHAPTER 1. INTRODUCTION OF GRAPHENE FOR SILICON OPTOELECTRONICS 1.1 Introduction 1.2 Optical Absorption 1.3 Emergence of Graphene in Silicon Optoelectronics 1.4 Photodetection in Graphene 1.4.1 Performance Metrics 1.4.2 Photovoltaic Effect 1.4.3 Photoemission in Graphene Schottky Junctions 1.4.4 Thermionic Emission in Graphene Based Interfaces 1.4.5 Hot Electron Based Photodetection 1.4.6 Infrared Modulators 1.4.7 Photovoltaic Devices 1.5 Challenges and Perspectives 1.6 References CHAPTER 2. GROWTH AND TRANSFER OF GRAPHENE 2.1 Introduction 2.2 Crystal Structure and Bonding 2.3 Growth of Graphene 2.4 Growth Dynamics and Choice of Substrate 2.4.1 Growth on Metallic Substrates 2.4.2 Direct Growth on Dielectric Substrates 2.4.3 Direct Growth on Semiconductor Substrates 2.4.4 CMOS Compatible Growth of Thin Films Over Graphene 2.5 Growth at Industrial Scale. 2.6 Growth of Macro Assembled Graphene 2.7 Inkjet Printing of Graphene 2.8 Graphene Transfer Methods 2.9 Graphene/Silicon Contact Fabrication 2.10 Graphene Transfer on Flexible Substrate 2.11 Challenges and Perspectives 2.12 References CHAPTER 3. PHYSICS OF GRAPHENE/SILICON JUNCTIONS 3.1 Introduction 3.2 Physics of Schottky Junction 3.3 Measurement of Schottky Barrier Height 3.3.1 Capacitance Voltage Measurement 3.3.2 Current Voltage Measurement 3.3.3 Photoelectric Measurement 3.3.4 Thermionic Emission Measurements. 3.4 2D Materials and Schottky Junctions 3.5 Graphene and Conventional Semiconductor Junctions. 3.6 Challenges and Perspectives 3.7 References CHAPTER 4. GRAPHENE/SILICON JUNCTION FOR HIGH PERFORMANCE PHOTODETECTORS 4.1 Introduction 4.2 Ultraviolet Photodetectors 4.3 Visible to Near Infrared Photodetectors. 4.4 Broadband Photodetectors 4.4.1 Nanostructured Materials for Photodetection 4.4.2 Applications of Nanomaterials for Graphene Silicon Integrated Photodetectors 4.5 Challenges and Perspectives 4.6 References CHAPTER 5. GRAPHENE/SILICON SOLAR ENERGY HARVESTING DEVICES 5.1 Introduction 5.2 Emergence of Graphene Silicon in Photovoltaics 5.3 Photovoltaic Mechanism in Graphene Silicon Solar Cells 5.4 Performance Parameters for Solar Cells 5.5 Theoretical Efficiency Limits of Graphene Silicon Solar Cells 5.6 Optimization of Graphene/Silicon Solar Cells 5.6.1 Doping of Graphene 5.6.2 Light Trapping in Silicon 5.6.3 Antireflection Coating 5.6.4 Interface Engineering 5.6.5 Surface Passivation 5.7 Challenges and Perspectives 5.8 References CHAPTER 6. GRAPHENE SILICON INTEGRATED WAVEGUIDE DEVICES 6.1 Introduction 6.2 Hybrid Waveguide Photodetector 6.3 Hybrid Waveguide Modulator 6.3.1 Electro Optical Modulator. 6.3.2 Thermo Optic Modulator 6.4 Challenges and Perspectives 6.5 References CHAPTER 7. GRAPHENE FOR SILICON IMAGE SENSOR 7.1 Introduction 7.2 Quantum Dot based Infrared Graphene Image Sensor 7.3 Graphene Thermopile Image Sensor 7.4 Graphene THz Image Sensor 7.5 Curved Image Sensor Array 7.6 Neural Network Image Sensors 7.7 Graphene Charge Coupled Device Image Sensor 7.8 Graphene Based Position Sensitive Detector 7.9 Challenges and Perspectives 7.10 References CHAPTER 8. SYSTEM INTEGRATION WITH GRAPHENE FOR SILICON OPTOELECTRONICS 8.1 Introduction 8.2 Graphene Silicon Flip Chips 8.3 Graphene Silicon Heterogeneous Integration 8.4 Graphene Silicon Monolithic Integration for Optoelectronics Applications 8.5 Challenges and Perspectives 8.6 References CHAPTER 9. GRAPHENE FOR SILICON OPTOELECTRONIC SYNAPTIC DEVICES 9.1. Introduction 9.2. Silicon Neurons 9.3. Synaptic devices 9.4. Silicon Optoelectronic Synaptic Devices 9.5. ORAM Synaptic Devices 9.6. Graphene for Silicon Synaptic Devices 9.7. Synaptic Phototransistor 9.8. Mechano-photonic Synaptic Transistor 9.9. Challenges and Perspectives CHAPTER 10 FUTURE TRENDS AND CHALLENGES Reference
Summary: Projecting device performance beyond the scaling limits of Moore's law requires technologies based on novel materials and device architecture. Due to its excellent electronic, thermal, and optical properties, graphene has emerged as a scalable, low-cost material with enormous integration possibilities for numerous optoelectronic applications. Graphene for Post-Moore Silicon Optoelectronics presents an up-to-date overview of the fundamentals, applications, challenges, and opportunities of integrating graphene and other 2D materials with silicon (Si) technologies. With an emphasis on graphene-silicon (Gr/Si) integrated devices in optoelectronics, this valuable resource also addresses emerging applications such as optoelectronic synaptic devices, optical modulators, and infrared image sensors. The book opens with an introduction to graphene for silicon optoelectronics, followed by chapters describing the growth, transfer, and physics of graphene/silicon junctions. Subsequent chapters each focus on a particular Gr/Si application, including high-performance photodetectors, solar energy harvesting devices, and hybrid waveguide devices. The book concludes by offering perspectives on the future challenges and prospects of Gr/Si optoelectronics, including the emergence of wafer-scale systems and neuromorphic optoelectronics.
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Table of Contents
CHAPTER 1. INTRODUCTION OF GRAPHENE FOR SILICON OPTOELECTRONICS
1.1 Introduction
1.2 Optical Absorption
1.3 Emergence of Graphene in Silicon Optoelectronics
1.4 Photodetection in Graphene
1.4.1 Performance Metrics
1.4.2 Photovoltaic Effect
1.4.3 Photoemission in Graphene Schottky Junctions
1.4.4 Thermionic Emission in Graphene Based Interfaces
1.4.5 Hot Electron Based Photodetection
1.4.6 Infrared Modulators
1.4.7 Photovoltaic Devices
1.5 Challenges and Perspectives
1.6 References

CHAPTER 2. GROWTH AND TRANSFER OF GRAPHENE
2.1 Introduction
2.2 Crystal Structure and Bonding
2.3 Growth of Graphene
2.4 Growth Dynamics and Choice of Substrate
2.4.1 Growth on Metallic Substrates
2.4.2 Direct Growth on Dielectric Substrates
2.4.3 Direct Growth on Semiconductor Substrates
2.4.4 CMOS Compatible Growth of Thin Films Over Graphene
2.5 Growth at Industrial Scale.
2.6 Growth of Macro Assembled Graphene
2.7 Inkjet Printing of Graphene
2.8 Graphene Transfer Methods
2.9 Graphene/Silicon Contact Fabrication
2.10 Graphene Transfer on Flexible Substrate
2.11 Challenges and Perspectives
2.12 References

CHAPTER 3. PHYSICS OF GRAPHENE/SILICON JUNCTIONS
3.1 Introduction
3.2 Physics of Schottky Junction
3.3 Measurement of Schottky Barrier Height
3.3.1 Capacitance Voltage Measurement
3.3.2 Current Voltage Measurement
3.3.3 Photoelectric Measurement
3.3.4 Thermionic Emission Measurements.
3.4 2D Materials and Schottky Junctions
3.5 Graphene and Conventional Semiconductor Junctions.
3.6 Challenges and Perspectives
3.7 References

CHAPTER 4. GRAPHENE/SILICON JUNCTION FOR HIGH PERFORMANCE PHOTODETECTORS
4.1 Introduction
4.2 Ultraviolet Photodetectors
4.3 Visible to Near Infrared Photodetectors.
4.4 Broadband Photodetectors
4.4.1 Nanostructured Materials for Photodetection
4.4.2 Applications of Nanomaterials for Graphene Silicon Integrated Photodetectors
4.5 Challenges and Perspectives
4.6 References

CHAPTER 5. GRAPHENE/SILICON SOLAR ENERGY HARVESTING DEVICES
5.1 Introduction
5.2 Emergence of Graphene Silicon in Photovoltaics
5.3 Photovoltaic Mechanism in Graphene Silicon Solar Cells
5.4 Performance Parameters for Solar Cells
5.5 Theoretical Efficiency Limits of Graphene Silicon Solar Cells
5.6 Optimization of Graphene/Silicon Solar Cells
5.6.1 Doping of Graphene
5.6.2 Light Trapping in Silicon
5.6.3 Antireflection Coating
5.6.4 Interface Engineering
5.6.5 Surface Passivation
5.7 Challenges and Perspectives
5.8 References

CHAPTER 6. GRAPHENE SILICON INTEGRATED WAVEGUIDE DEVICES
6.1 Introduction
6.2 Hybrid Waveguide Photodetector
6.3 Hybrid Waveguide Modulator
6.3.1 Electro Optical Modulator.
6.3.2 Thermo Optic Modulator
6.4 Challenges and Perspectives
6.5 References

CHAPTER 7. GRAPHENE FOR SILICON IMAGE SENSOR
7.1 Introduction
7.2 Quantum Dot based Infrared Graphene Image Sensor
7.3 Graphene Thermopile Image Sensor
7.4 Graphene THz Image Sensor
7.5 Curved Image Sensor Array
7.6 Neural Network Image Sensors
7.7 Graphene Charge Coupled Device Image Sensor
7.8 Graphene Based Position Sensitive Detector
7.9 Challenges and Perspectives
7.10 References

CHAPTER 8. SYSTEM INTEGRATION WITH GRAPHENE FOR SILICON OPTOELECTRONICS
8.1 Introduction
8.2 Graphene Silicon Flip Chips
8.3 Graphene Silicon Heterogeneous Integration
8.4 Graphene Silicon Monolithic Integration for Optoelectronics Applications
8.5 Challenges and Perspectives
8.6 References

CHAPTER 9. GRAPHENE FOR SILICON OPTOELECTRONIC SYNAPTIC DEVICES
9.1. Introduction
9.2. Silicon Neurons
9.3. Synaptic devices
9.4. Silicon Optoelectronic Synaptic Devices
9.5. ORAM Synaptic Devices
9.6. Graphene for Silicon Synaptic Devices
9.7. Synaptic Phototransistor
9.8. Mechano-photonic Synaptic Transistor
9.9. Challenges and Perspectives

CHAPTER 10 FUTURE TRENDS AND CHALLENGES
Reference

Projecting device performance beyond the scaling limits of Moore's law requires technologies based on novel materials and device architecture. Due to its excellent electronic, thermal, and optical properties, graphene has emerged as a scalable, low-cost material with enormous integration possibilities for numerous optoelectronic applications. Graphene for Post-Moore Silicon Optoelectronics presents an up-to-date overview of the fundamentals, applications, challenges, and opportunities of integrating graphene and other 2D materials with silicon (Si) technologies. With an emphasis on graphene-silicon (Gr/Si) integrated devices in optoelectronics, this valuable resource also addresses emerging applications such as optoelectronic synaptic devices, optical modulators, and infrared image sensors. The book opens with an introduction to graphene for silicon optoelectronics, followed by chapters describing the growth, transfer, and physics of graphene/silicon junctions. Subsequent chapters each focus on a particular Gr/Si application, including high-performance photodetectors, solar energy harvesting devices, and hybrid waveguide devices. The book concludes by offering perspectives on the future challenges and prospects of Gr/Si optoelectronics, including the emergence of wafer-scale systems and neuromorphic optoelectronics.

About the Author
Yang Xu is a full professor and Assistant Dean at the School of Micro-Nano Electronics, Zhejiang University, China. He is an IEEE NTC Distinguished Lecturer and Senior Member of the IEEE Electron Devices Society. His current research interests include emerging low-dimensional smart sensors, photodetectors, and actuators for internet-of-things and flexible electronics.

Khurram Shehzad served as a Research Associate Professor at the School of Micro-Nano Electronics, Zhejiang University, China.

Srikrishna Chanakya Bodepudi is a Distinguished Research Fellow at the School of Micro-Nano Electronics, Zhejiang University, China.

Ali Imran is perusing his research at School of Micro-Nano Electronics, Zhejiang University, China.

Bin Yu is a full professor at the School of Micro-Nano Electronics, Zhejiang University, China. His current research interests include nanoelectronics, sensors, and neuromorphic devices.

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