Interface engineering in organic field-effect transistors / (Record no. 96160)

000 -LEADER
fixed length control field 08487cam a22008777i 4500
001 - CONTROL NUMBER
control field 14166361
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20260715082149.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cnu---unuuu
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230710s2023 gw o 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783527351459
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783527840465
Qualifying information electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 352784046X
Qualifying information electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 3527840478
Qualifying information electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783527840489
Qualifying information electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 3527840486
Qualifying information electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783527840472
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Cancelled/invalid ISBN 9783527351459
Qualifying information hardcover
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Cancelled/invalid ISBN 3527351450
Qualifying information hardcover
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)1389714846
035 #9 - SYSTEM CONTROL NUMBER
System control number (OCLCCM-Owned)1389714846
041 ## - LANGUAGE CODE
Language code of text/sound track or separate title eng
049 ## - LOCAL HOLDINGS (OCLC)
Holding library MAIN
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC173.4.I57
Item number G86 2023
100 1# - MAIN ENTRY--PERSONAL NAME
Preferred name for the person Guo, Xuefeng,
Relator term author.
245 10 - TITLE STATEMENT
Title Interface engineering in organic field-effect transistors /
Statement of responsibility, etc Xuefeng Guo, Hongliang Chen.
264 #1 - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc Weinheim, Germany :
Name of publisher, distributor, etc Wiley-VCH,
Date of publication, distribution, etc [2023]
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
505 0# - CONTENTS
Formatted contents note Cover -- Title Page -- Copyright -- Contents -- Preface -- Author Biographies -- List of Acronyms and Abbreviations -- Chapter 1 Introduction -- 1.1 Different Interfaces in OFETs -- 1.2 Brief Historic Overview of Interface Engineering in OFETs -- 1.3 Scope of the Book -- Chapter 2 Interfacial Modification Methods -- 2.1 Noncovalent Modification Methods -- 2.1.1 Charge Insertion Layer at the Electrode Surface -- 2.1.2 Dielectric Surface Passivation Methods -- 2.2 Covalent Modification Methods -- 2.2.1 SAM Modification of Electrodes -- 2.2.2 SAM Modification of Dielectrics -- 2.2.2.1 SAM/SiO2 Dielectrics -- 2.2.2.2 SAM/High-k Dielectrics -- 2.2.2.3 Self-Assembled Monolayer Field-Effect Transistors (SAMFETs) -- 2.3 Efforts in Developing New Methods -- Chapter 3 Semiconductor/Semiconductor Interface -- 3.1 Influence of Additives on a Material's Nucleation and Morphology -- 3.1.1 Solvent Additives -- 3.1.2 Nucleating Agents -- 3.1.3 Template-Mediated Crystallization -- 3.1.4 Blending with Insulating Polymers -- 3.1.5 Blending with Polymer Elastomer: Nanoconfinement Effect -- 3.2 Enhancing the Performance Through Semiconductor Heterojunctions -- 3.2.1 Planar Bilayer Heterostructures -- 3.2.2 Molecular-Level Heterojunction -- 3.2.3 Supramolecular Arrangement of the Heterojunctions -- 3.3 Integrating Molecular Functionalities into Electrical Circuits -- 3.3.1 Charge-Trapping-Induced Memory Effect -- 3.3.2 Photochromism-Induced Switching Effect -- Chapter 4 Semiconductor/Electrode Interface -- 4.1 Work Function Tuning for Better Contact -- 4.1.1 SAM Modification -- 4.1.2 Charge Insertion Layer Modification -- 4.1.3 Polymer-Based Electrodes -- 4.1.4 Carbon Nanomaterial-Based Electrodes -- 4.1.5 Covalent Bond Formation at the Molecular Level -- 4.2 Installing Switching Effects at Semiconductor/Electrode Interface.
505 8# - CONTENTS
Formatted contents note Chapter 5 Semiconductor/Dielectric Interface -- 5.1 Dielectric Modification to Tune Semiconductor Morphology -- 5.1.1 Dielectric Surface Energy Control -- 5.1.1.1 Modify with SAM -- 5.1.1.2 Surface Modification with Polymers -- 5.1.2 Dielectric Microstructure Design -- 5.1.2.1 Roughness Effect -- 5.1.2.2 Nano-fabrication Created Microstructure -- 5.1.2.3 Self-assembled Morphology of Dielectric -- 5.2 Eliminating Interfacial Traps -- 5.2.1 Dielectric Surface Passivation (Treatment) Methods -- 5.2.1.1 Polymer Encapsulation of Dielectrics -- 5.2.1.2 Gap Dielectrics -- 5.2.2 SAM/SiO2 Dielectrics -- 5.2.2.1 Provide Efficient Insulating Barrier Height -- 5.2.2.2 Control Surface Polarity and Carrier Density -- 5.2.3 SAM/High-k Dielectrics -- 5.2.3.1 Fundamentals of SAM-Modified High-k Dielectrics -- 5.2.3.2 SAM/High-k Hybrid Dielectrics for Flexible Substrate -- 5.2.4 Self-assembled Monolayer Field-Effect Transistors (SAMFETs) -- 5.2.4.1 Molecule Design for SAMFETs -- 5.2.4.2 Morphology Control of SAMFET -- 5.3 Integrating New Functionalities -- 5.3.1 Photoresponsive Dielectrics -- 5.3.2 Other External Stimuli-Responsive Dielectrics -- 5.3.2.1 Pressure Sensor -- 5.3.2.2 Thermal Sensor -- 5.3.2.3 Magnetic Sensor -- 5.3.2.4 Multifunctional Sensor -- 5.3.3 Integrating Memory Effect at the Dielectrics -- Chapter 6 Semiconductor/Environment Interface -- 6.1 Device Optimization to Improve Sensing Performance -- 6.1.1 Monolayer Functionalization -- 6.1.2 Bilayer Heterojunction Approach -- 6.1.3 Remote Floating Gate -- 6.2 OECT-Based and EGOFET-Based Sensors -- Chapter 7 Interfacing Organic Electronics with Biology -- 7.1 Integration of OFETs/OECTs with Nonelectrogenic Cells -- 7.2 Integration of Flexible Bioelectronics with Electrogenic Cells -- 7.3 Light/Cell/Device Interfaces -- Chapter 8 Concluding Remarks and Outlook -- 8.1 New Challenges in Molecular Design.
505 8# - CONTENTS
Formatted contents note 8.2 High-Quality OSC Films: Self-Assembly Control -- 8.3 High-Performance Scalable Flexible Optoelectronics -- 8.4 Exploration of Novel Structures: Organic/2D Heterostructures and Vertical Structures -- 8.5 Instability: Stability in Aqueous Media and Thermal Stability in Hygienic Applications -- 8.6 Multifunctional Sensor Systems -- References -- Index -- EULA.
520 ## - SUMMARY, ETC.
Summary, etc Interface Engineering in Organic Field-Effect Transistors covers the state of the art in organic field-effect transistors and reviews charge transport at the interfaces, device design concepts, and device fabrication processes, and gives an outlook on the development of future optoelectronic devices. This book starts with an overview of the commonly adopted methods to obtain various semiconductor/semiconductor interfaces and charge transport mechanisms at these heterogeneous interfaces. Then, it covers the modification at the semiconductor/electrode interfaces, through which to tune the work function of electrodes as well as reveal charge injection mechanisms at the interfaces. Charge transport physics at the semiconductor/dielectric interface is discussed in detail. The book describes the remarkable effect of SAM modification on the semiconductor film morphology and thus the electrical performance. In particular, valuable analyses of charge trapping/detrapping engineering at the interface to realize new functions are summarized.
588 ## - SOURCE OF DESCRIPTION NOTE
Source of description note Description based on online resource; title from digital title page (viewed on July 12, 2023).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Interfaces (Physical sciences)
Authority record control number http://id.loc.gov/authorities/subjects/sh94006577
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Organic field-effect transistors.
Authority record control number http://id.loc.gov/authorities/subjects/sh2006008274
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Interfaces (Sciences physiques)
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Transistors à effet de champ organiques.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Materials Science.
Source of heading or term bisacsh/2022
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physical & Theoretical.
Source of heading or term bisacsh/2022
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Chemistry.
Source of heading or term bisacsh/2022
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element SCIENCE.
Source of heading or term bisacsh/2022
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
Source of heading or term bisacsh/2022
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics.
Source of heading or term bisacsh/2022
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING.
Source of heading or term bisacsh/2022
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Materials Science.
Source of heading or term bisacsh/2023
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physical & Theoretical.
Source of heading or term bisacsh/2023
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Chemistry.
Source of heading or term bisacsh/2023
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element SCIENCE.
Source of heading or term bisacsh/2023
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
Source of heading or term bisacsh/2023
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics.
Source of heading or term bisacsh/2023
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING.
Source of heading or term bisacsh/2023
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Materials Science.
Source of heading or term bisacsh/2024
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physical & Theoretical.
Source of heading or term bisacsh/2024
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Chemistry.
Source of heading or term bisacsh/2024
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element SCIENCE.
Source of heading or term bisacsh/2024
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
Source of heading or term bisacsh/2024
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics.
Source of heading or term bisacsh/2024
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING.
Source of heading or term bisacsh/2024
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Interfaces (Physical sciences)
Source of heading or term fast
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Organic field-effect transistors
Source of heading or term fast
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Biosensors.
Source of heading or term thub
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Chemistry, Physical And Theoretical
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Semiconductors
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Science
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Technology & Engineering
655 #0 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
655 #7 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Llibres electrònics.
Source of term thub
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Chen, Hongliang,
Relator term author.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Print version:
International Standard Book Number 3527351450
-- 9783527351459
Record control number (OCoLC)1310398452
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://onlinelibrary.wiley.com/doi/book/10.1002/9783527840489
Link text Full text is available at Wiley Online Library. Click here to view.
942 ## - ADDED ENTRY ELEMENTS
Source of classification or shelving scheme
Item type EBOOK
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Use restrictions Not for loan Permanent Location Current Location Date acquired Date last seen Price effective from Item type
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