| 000 -LEADER |
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| fixed length control field |
08545cam a22006978i 4500 |
| 001 - CONTROL NUMBER |
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| control field |
14168148 |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20260710110437.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION |
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| fixed length control field |
m o d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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| fixed length control field |
cr ||||||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
241016s2024 nju o 001 0 eng |
| 010 ## - LIBRARY OF CONGRESS CONTROL NUMBER |
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| LC control number |
2024044708 |
| 015 ## - NATIONAL BIBLIOGRAPHY NUMBER |
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| National bibliography number |
GBC489594 |
| Source |
bnb |
| 016 7# - NATIONAL BIBLIOGRAPHIC AGENCY CONTROL NUMBER |
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| Record control number |
300209714 |
| Source |
Uk |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9781394188949 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9781394188956 |
| Qualifying information |
(epub) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
1394188951 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9781394188987 |
| Qualifying information |
(adobe pdf) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
1394188986 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| Cancelled/invalid ISBN |
9781394188949 |
| Qualifying information |
(hardback) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781394188970 |
| Qualifying information |
(electronic bk. : oBook) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
1394188978 |
| Qualifying information |
(electronic bk. : oBook) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| Cancelled/invalid ISBN |
1394188943 |
| Qualifying information |
hardcover |
| 024 7# - OTHER STANDARD IDENTIFIER |
|---|
| Standard number or code |
10.1002/9781394188970 |
| Source of number or code |
doi |
| 024 8# - OTHER STANDARD IDENTIFIER |
|---|
| Standard number or code |
CIPO000096019 |
| 035 ## - SYSTEM CONTROL NUMBER |
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| System control number |
(OCoLC)1478248921 |
| Canceled/invalid control number |
(OCoLC)1435948193 |
| -- |
(OCoLC)1442067096 |
| -- |
(OCoLC)1517987817 |
| 035 #9 - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(OCLCCM-Owned)1478248921 |
| 041 ## - LANGUAGE CODE |
|---|
| Language code of text/sound track or separate title |
eng |
| 042 ## - AUTHENTICATION CODE |
|---|
| Authentication code |
pcc |
| 049 ## - LOCAL HOLDINGS (OCLC) |
|---|
| Holding library |
MAIN |
| 050 00 - LIBRARY OF CONGRESS CALL NUMBER |
|---|
| Classification number |
TK7871.95 |
| 072 #7 - SUBJECT CATEGORY CODE |
|---|
| Subject category code |
TEC |
| Subject category code subdivision |
027000 |
| Source |
bisacsh |
| 072 #7 - SUBJECT CATEGORY CODE |
|---|
| Subject category code |
TEC |
| Subject category code subdivision |
008090 |
| Source |
bisacsh |
| 072 #7 - SUBJECT CATEGORY CODE |
|---|
| Subject category code |
TG |
| Source |
bicssc |
| 245 00 - TITLE STATEMENT |
|---|
| Title |
Advanced nanoscale MOSFET architectures : |
| Remainder of title |
current trends and future perspectives / |
| Statement of responsibility, etc |
edited by Kalyan Biswas, Angsuman Sarkar. |
| 263 ## - PROJECTED PUBLICATION DATE |
|---|
| Projected publication date |
2501 |
| 264 #1 - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) |
|---|
| Place of publication, distribution, etc |
Hoboken, New Jersey : |
| Name of publisher, distributor, etc |
Wiley, |
| Date of publication, distribution, etc |
[2024] |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 online resource |
| 336 ## - CONTENT TYPE |
|---|
| Content type term |
text |
| Content type code |
txt |
| Source |
rdacontent |
| 337 ## - MEDIA TYPE |
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| Media type term |
computer |
| Media type code |
c |
| Source |
rdamedia |
| 338 ## - CARRIER TYPE |
|---|
| Carrier type term |
online resource |
| Carrier type code |
cr |
| Source |
rdacarrier |
| 500 ## - GENERAL NOTE |
|---|
| General note |
Includes index. |
| 505 0# - CONTENTS |
|---|
| Formatted contents note |
About the Editors -- List of Contributors -- Preface -- Acknowledgments -- 1 Emerging MOSFET Technologies 1 Kalyan Biswas and Angsuman Sarkar -- 1.1 Introduction: Transistor Action -- 1.2 MOSFET Scaling -- 1.3 Challenges in Scaling the MOSFET -- 1.4 Emerging MOSFET Architectures -- 1.4.5 Graphene FET -- 1.4.6 III-V Material-based MOSFETS -- 1.4.7 HEMT -- 1.4.8 Strain Engineered MOSFETs -- 1.5 Organization of this Book -- 2 MOSFET: Device Physics and Operation 15 Ruthramurthy Balachandran, Savitesh M. Sharma, and Avtar Singh -- 2.1 Introduction to MOSFET -- 2.2 Advantages of MOSFET -- 2.3 Applications of MOSFETs -- 2.4 Types of MOSFETs -- 2.5 Band Diagram of MOSFET -- 2.6 MOSFET Regions of Operation -- 2.7 Scaling of MOSFET -- 2.8 Short-channel Effects -- 2.9 Body Bias Effect -- 2.10 Advancement of MOSFET Structures -- 3 High-K Dielectrics in Next Generation VLSI/Mixed Signal Circuits 47 Asutosh Srivastava -- 3.1 Introduction to Gate Dielectrics -- 3.2 High-K Dielectrics in Metal-Oxide-Semiconductor Capacitors -- 3.3 High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors -- 3.4 MOSFETs Scaling and the Need of High-K -- 3.5 High-K Dielectrics in Next Generation Transistors -- 4 Consequential Effects of Trap Charges on Dielectric Defects for MU-G FET 61 Annada S. Lenka and Prasanna K. Sahu -- 4.1 Introduction -- 4.2 TID Effects Overview -- 4.3 Application Area of Device for TID Effect Analysis -- 4.4 Near the Earth: Trapped Radiation -- 4.5 Ionizing Radiation Effect in Silicon Dioxide (SiO2) -- 4.6 TID Effects in CMOS -- 4.7 TID Effects in Bipolar Devices -- 4.8 Understanding and Modeling a-SiO2 Physics -- 4.9 Hydrogen (H2) Reaction with Trapped Charges at Insulator -- 4.10 Pre-Existing Trap Density and their Respective Location -- 4.11 Use of High-K Dielectric in MU-G FET -- 4.12 Properties of Trap in the High-K with Interfacial Layer -- 4.13 Trap Extraction Techniques -- 4.14 Conclusion -- 5 Strain Engineering for Highly Scaled MOSFETs 85 Chinmay K. Maiti, Taraprasanna Dash, Jhansirani Jena, and Eleena Mohapatra -- 5.1 Introduction -- 5.2 Simulation Approach -- 5.3 Case Study -- 5.4 Conclusions -- 6 TCAD Analysis of Linearity Performance on Modified Ferroelectric Layer in FET Device with Spacer 113 Yash Pathak, Kajal Verma, Bansi Dhar Malhotra, and Rishu Chaujar -- 6.1 Introduction -- 6.2 Simulation and Structure of Device -- 6.3 Results and Analysis -- 6.4 Conclusion -- 7 Electrically Doped Nano Devices: A First Principle Paradigm 125 Debarati D. Roy, Pradipta Roy, and Debashis -- 7.1 Introduction -- 7.2 Electrical Doping -- 7.3 First Principle -- 7.4 Molecular Simulation -- 7.5 Conclusion -- 8 Tunnel FET: Principles and Operations 143 Zahra Ahangari -- 8.1 Introduction to Quantum Mechanics and Principles of Tunneling -- 8.2 Tunnel Field-Effect Transistor -- 8.3 Challenges of Tunnel Field-Effect Transistor -- 8.4 Techniques for Improving Electrical Performance of Tunnel Field-Effect Transistor -- 8.5 Conclusion -- 9 GaN Devices for Optoelectronics Applications 175 Nagarajan Mohankumar and Girish S. Mishra -- 9.1 Introduction -- 9.2 Properties of GaN-Based Material -- 9.3 GaN LEDs -- 9.4 GaN Lasers -- 9.5 GaN HEMTs for Optoelectronics -- 9.6 GaN Sensors -- 10 First Principles Theoretical Design on Graphene-Based Field-Effect Transistors 201 Yoshitaka Fujimoto -- 10.1 Introduction -- 10.2 Graphene -- 10.3 Graphene/h-BN Hybrid Structure -- 10.4 Conclusions -- 11 Performance Analysis of Nanosheet Transistors for Analog ICs 221 Yogendra P. Pundir, Arvind Bisht, and Pankaj K. Pal -- 11.1 Introduction -- 11.2 Evolution of Nanosheet Transistors -- 11.3 TCAD Modeling of Nanosheet Transistor -- 11.4 Transistor's Analog Performance Parameters -- 11.5 Challenges and Perspectives of Modern Analog Design -- 12 Low-Power Analog Amplifier Design using MOS Transistor in the Weak Inversion Mode 255 Soumya Pandit and Koyel Mukherjee -- 12.1 Introduction -- 12.2 Review of the Theory ofWeak Inversion Mode Operation of MOS Transistor -- 12.3 Design Steps for Transistor Sizing Using the IC -- 12.4 Design Examples -- 12.5 Summary -- 13 Ultra-conductive Junctionless Tunnel Field-effect Transistor-based Biosensor with Negative Capacitance 281 Palasri Dhar, Soumik Poddar, and Sunipa Roy -- 13.1 Introduction -- 13.2 Importance of SS and ION/IOFF in Biosensing -- 13.3 Importance of Dopingless Source and Drain in High Conductivity -- 13.4 Relation of Negative Capacitance with Non-hysteresis and Effect on Biosensing -- 13.5 Variation of Source Material on Biosensing -- 13.6 Importance of Dual Gate and Ferroelectricity on Biosensing -- 13.7 Effect of Dual Material Gate on Biosensing -- 14 Conclusion and Future Perspectives 301 Kalyan Biswas and Angsuman Sarkar -- 14.1 Applications -- 14.2 Some Recent Developments -- 14.3 Future Perspectives -- 14.4 Conclusion -- References -- Index. |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc |
"Modern life has been revolutionized by the advancements in Complementary Metal Oxide Semiconductor (CMOS) technology. The performance of MOSFET has improved dramatically via gate length scaling since its invention. In order to serve the next generation high performance requirements with lower operating power, remorseless scaling of CMOS technology has now reached to the atomic scale dimensions. Conventional MOSFET scaling not only involves the reduction of device size but also requires a reduction in the transistor supply voltage (VDD). With the reduction of VDD, the threshold voltage (Vth) must be scaled down simultaneously in order to attain reasonable ON-state current, reduce delay and to maintain sufficient gate overdrive voltage. As a consequence of device scaling following Moore's law, every year the channel length of the MOSFET is reducing, causing Short Channel Effect (SCEs). Different strategies have been considered to surmount SCEs using different device architectures and material compositions."-- |
| Assigning source |
Provided by publisher. |
| 588 ## - SOURCE OF DESCRIPTION NOTE |
|---|
| Source of description note |
Description based on print version record and CIP data provided by publisher; resource not viewed. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Metal oxide semiconductor field-effect transistors. |
| Authority record control number |
http://id.loc.gov/authorities/subjects/sh85084065 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nanotechnology. |
| Authority record control number |
http://id.loc.gov/authorities/subjects/sh91001490 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Transistors MOSFET. |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nanotechnologie. |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nanotechnology & MEMS. |
| Source of heading or term |
bisacsh/2024 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors. |
| Source of heading or term |
bisacsh/2024 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Electronics. |
| Source of heading or term |
bisacsh/2024 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
TECHNOLOGY & ENGINEERING. |
| Source of heading or term |
bisacsh/2024 |
| 655 #0 - INDEX TERM--GENRE/FORM |
|---|
| Genre/form data or focus term |
Electronic books. |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Biswas, Kalyan, |
| Relator term |
editor. |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Sarkar, Angsuman, |
| Relator term |
editor. |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
|---|
| Display text |
Print version: |
| Title |
Advanced nanoscale MOSFET architectures |
| Place, publisher, and date of publication |
Hoboken, New Jersey : Wiley, [2024] |
| International Standard Book Number |
9781394188949 |
| Record control number |
(DLC) 2024044707 |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
|---|
| Display text |
Print version : |
| International Standard Book Number |
9781394188949 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Uniform Resource Identifier |
https://onlinelibrary.wiley.com/doi/book/10.1002/9781394188970 |
| Link text |
Full text is available at Wiley Online Library. Click here to view. |
| 942 ## - ADDED ENTRY ELEMENTS |
|---|
| Source of classification or shelving scheme |
|
| Item type |
EBOOK |